July 24, 2017 (v1)
Conference paper
In this paper, AlN-based HEMTs on silicon are demonstrated using NH3-MBE. The spirit is to get the highest 2DEG density theoretically achievable in nitrides while keeping thin barrier thickness, which is mandatory to achieve high frequency performances. To do that, the strategy consists in growing a relaxed AlN ...
Uploaded on: December 4, 2022