DUBINKO , Vladimir

Ions arriving at a semiconductor surface with very low energy (2 - 8 eV) are interacting with defects deep inside the semiconductor. Several different defects were removed or modified in Sb-doped germanium, of which the E–center has the highest concentration. The low fluence and low energy of the plasma ions implies that the energy has to be...

Reaction rate theory in solids is modified taking into account intrinsic localized modes or discrete breathers (DBs) that can appear in crystals with sufficient anharmonicity resulting in violation of Arrhenius law. Large amplitude oscillations of atoms about their equilibrium positions in the lattice cause local potentials of alternating sign,...

Deep level transient spectroscopy shows that defects created by alpha irradiation of germanium are annealed by low energy plasma ions up to a depth of several thousand lattice units. The plasma ions have energies of 2-8 eV and therefore can deliver energies of the order of a few eV to the germaniumatoms. The most abundant defect is identified...

At sufficiently low temperatures, the reaction rates in solids are controlled by quantum rather than by thermal fluctuations. We solve the Schrödinger equation for a Gaussian wave packet in a non-stationary harmonic oscillator and derive simple analytical expressions for the increase of its mean energy with time induced by the time-periodic...

Novel mechanisms of defect annealing in solids are discussed, which are based on the large amplitude anharmonic lattice vibrations, a.k.a. intrinsic localized modes or discrete breathers (DBs). A model for amplification of defect annealing rate in Ge by low energy plasma-generated DBs is proposed, in which, based on recent atomistic modelling,...