DUBOZ , J.-Y.

We present capacitance-voltage [C(V)] measurements of self-assembled wurtzite-GaN quantum dots (QDs). The QDs are embedded in a charge-tunable diode structure and were grown by molecular beam epitaxy in the Stranski-Krastanov growth method. The internal electric fields present in GaN and its alloys together with its wide bandgap make this...

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We have fabricated the first ever proton beam imager using 11 p-i-n GaN diodes on sapphire. This shows the high potential of our approach which we will now develop with much larger arrays (128 pixels, 500µm pitch) and simultaneous reading by commercial Si read-out circuits to obtain a 1-D translating detector. In a later phase, we will develop...

The use of tunnel junctions (TJs) is a potential solution in blue LEDs to poor p-contacts, replacing it by another n-contact. TJs are even more advantageous for UV emitting structures, which suffer from the considerably low injection efficiency in high Al concentration UV LEDs. In this work we report our work on Ge n-doped GaN and AlGaN TJs...