The stress distribution on crack free thick continuous GaN film (12 mu m) grown by Metal organic chemical vapour deposition (MOCVD) on the arrays of different sizes of the patterned silicon substrate is investigated by micro-Raman (mu Raman) spectroscopy. On the largest crack free mesa (400 mu m) both mu-photoluminescence (mu PL) at low...
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March 2013 (v1)Journal articleUploaded on: December 4, 2022
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May 2018 (v1)Journal article
In this work, crack statistics are developed for MOCVD-grown 12 μm thick GaN on patterned Si substrate for different sizes, trench widths and trench heights of the mesas. Optical microscope is used to obtain the percentage ofcracked mesas in order to develop the crack statistics. The crack statistics show that the size and the trench height of...
Uploaded on: December 4, 2022