We analyze the room temperature photoluminescence properties of several multilayer stackings of GaN/AlN quantum dots. We report drastic differences of emission energies and linewidths between continuous wave and time-resolvedphotoluminescence experiments. In continuous wave experiments, the screening of internal electric fields by accumulation...
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July 1, 2004 (v1)Journal articleUploaded on: February 28, 2023
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November 15, 2003 (v1)Journal article
The time dependence of the photoluminescence of GaN/AlN quantum dots (QD's) after high photoexcitation is examined on a large time scale. A continuous change in energy peak is reported, resulting in a giant energy shift of more than 1 eV after delays of several hundreds of microseconds. Simultaneously, the intensity decreases over more than...
Uploaded on: February 28, 2023