FRAYSSINET , E

We present the first results about microelectromechanical (MEMS) resonators fabricated on epitaxial nitride semiconductors with thin buffers engineered for MEMS and NEMS applications. These results assess the use of thin buffers for GaN MEMS fabrication. On a 700 nm thick AlGaN/GaN epilayer, a high tensile stress is observed to increase the...

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Microdisks fabricated with III-nitride materials grown on GaN substrates are demonstrated, taking advantage of the high material quality of homoepitaxial films and advanced micro-fabrication processes. The epitaxial structure consists of InGaN/GaN multi-quantum wells (MQWs) sandwiched between AlGaN/GaN and InAlN/GaN superlattices as cladding...

In recent years, vertical GaN-on-GaN devices have emerged as potential substitutes for conventional lateral power devices like GaN-on-Si, GaN-on-Sapphire and SiC devices. This promise is due to the vertical structure that offers a pathway to higher breakdown voltages and lower on-resistance allowing to fully benefit of the superior properties...

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