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GALLART , Mathieu

Last name: GALLART

First name: Mathieu

February 26, 2001 (v1)

Journal article

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High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy.

Lefebvre, Pierre Morel, Aurélien Gallart, Mathieu

Time-resolvedphotoluminescence (PL), at T=8 K, is used to study a graded-width InGaN/GaN quantum well. Across the sample, the well width continuously varies from ∼5.5 to 2.0 nm corresponding to PL peak energies varying between 2.0 and 2.9 eV and to PL decay rates covering four orders of magnitude. The plot of decay times versus PL energies is...

Uploaded on: February 28, 2023
March 12, 2001 (v1)

Journal article

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Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes.

Lefebvre, Pierre Taliercio, Thierry Morel, Aurélien

We compare several InGaN-based low-dimensional systems, by time-resolved photoluminescence (PL), versus temperature (8

Uploaded on: February 28, 2023
2013 (v1)

Journal article

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Phonon-assisted exciton formation in ZnO/(Zn, Mg)O single quantum wells grown on C-plane oriented substrates.

Bretagnon, Thierry Beaur, Luc Guillet, Thierry

Phonon-assisted exciton formation in ZnO/(Zn, Mg)O single quantum wells grown on C-plane oriented substrates.

Uploaded on: December 4, 2022