November 26, 2019 (v1)
Journal article
The electronic properties of the graphene (Gr) Schottky junction with an Al 0.22 Ga 0.78 N/GaN heterostructure on silicon have been investigated, both experimentally and using ab-initio DFT calculations. A peculiar high n-type doping (1.1×10 13 cm-2), observed for Gr in contact with AlGaN, was explained by the combined effect of Fermi level...
Uploaded on: December 4, 2022