GOGNEAU , N.

Last name: GOGNEAU

First name: N.

September 3, 2007 (v1)

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Density of InAs∕InP(001) quantum dots grown by metal-organic vapor phase epitaxy: Independent effects of InAs and cap-layer growth rates

Michon, A. Patriarche, G. Beaudoin, G.

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Uploaded on: December 4, 2022
2011 (v1)

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Sharp interface in epitaxial graphene layers on 3C-SiC(100)/Si(100) wafers

Ouerghi, A. Ridene, M. Balan, A.

Graphene ranks highly as a promising material for future nanoelectronic devices because of its exceptional electron-transport properties. It appears as a material of choice for high-frequency applications. We report the growth and structure of epitaxial graphene layers on 3C-SiC(100)/Si(100) wafers using low-energy electron microscopy....

Uploaded on: December 3, 2022
2018 (v1)

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Composition Metrology of Ternary Semiconductor Alloys Analyzed by Atom Probe Tomography

Di Russo, E. Moyon, F. Gogneau, N.

Ternary semiconductor alloys based on the AyB1-yC stoichiometry are widely employed in electronic devices and their composition plays a key role in bandgap engineering of heterostructures. We have studied the crucial issue of accuracy in composition measurements of AlyGa1-yN and MgyZn1-y O alloys by Atom Probe Tomography. The results indicate a...

Uploaded on: December 4, 2022
July 2016 (v1)

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Assessing the Composition of Wide Bandgap Compound Semiconductors by Atom Probe Tomography: A Metrological Problem

Rigutti, L. Mancini, L. Di Russo, E.

International audience

Uploaded on: December 4, 2022

GOGNEAU , N.

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