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III-nitrides provide a versatile platform for nonlinear photonics. In this work, we explore a new promising configuration – composite waveguides containing GaN and AlN layers with inverted polarity, i.e., having opposite signs of the χ (2) nonlinear coefficient. This configuration allows us to address the limiting problem of the mode overlap...
III-Nitride semiconductors are promising materials for on-chip integrated photonics. They provide a wide transparency window from the ultraviolet to the infrared that can be exploited for second-order nonlinear conversions. Here we demonstrate a photonics platform based on epitaxial GaN-on-insulator on silicon. The transfer of the epi-material...
We experimentally demonstrate polariton laser in a GaN ridge waveguide. The strong-coupling regime is assessed through a comparison of the measured and modeled cavity free spectral range (FSR). The findings reveal that the laser exhibits a transition from monomode to multimode operation as the temperature is increased from 70K to 150K. The...
Le laser à polaritons en géométrie de guide d'onde intègre une couche active en régime de couplage fort exciton-photon. Dans une cavité GaN horizontale courte (60µm), nous démontrons un fonctionnement en continu ou en régime de blocage de modes contrôlable, dépendant du spectre de gain, de la dispersion de vitesse de groupe et de la...
Le laser à polaritons en géométrie de guide d'onde intéresse de par ses propriétés uniques résultant du couplage fort exciton-photon. Cette étude se concentre sur une cavité GaN courte de 60 µm, où le fonctionnement en continu ou en régime de blocage de mode est observé. La dépendance de ces régimes est étroitement liée au spectre de gain, à la...
We demonstrate phase-matched second harmonic generation in gallium nitride on silicon microdisks. The microdisks are integrated with side-coupling bus waveguides in a two-dimensional photonic circuit. The second harmonic generation is excited with a continuous wave laser in the telecom band. By fabricating a series of microdisks with diameters...
GeSn alloys are the most promising direct band gap semiconductors to demonstrate full CMOS-compatible laser integration with a manufacturing from Group-IV materials. Here, we show that room temperature lasing, up to 300 K, can be obtained with GeSn. This is achieved in microdisk resonators fabricated on a GeSn-On-Insulator platform by combining...
We experimentally demonstrate the difference between a ridge polariton laser and a conventional edge-emitting ridge laser operating under electron-hole population inversion. The horizontal laser cavities are 20-60µm long GaN etched ridge structures with vertical Bragg refectors. We investigatethe laser threshold under optical pumping and assess...