GRUZINSKIS , V.

We report measurements of radiation transmission in the 0.220--0.325 THz frequency domain through GaN quantum wells grown on sapphire substrates at room and low temperatures. A significant enhancement of the transmitted beam intensity with the applied voltage on the devices under test is found. For a deeper understanding of the physical...

We report on measurements of radiation transmission in the 0.220-0.325 THz and 0.75-1.1 THz frequency ranges through GaN quantum wells grown on sapphire substrates at nitrogen and room temperatures. Significant enhancement of the transmitted beam intensity with applied voltage is found at nitrogen temperature. This effect is explained by...