H

H

HAAS , H.

Last name: HAAS

First name: H.

March 2005 (v1)

Journal article

Metadata-only

Some benefits of Fe doped less dislocated GaN templates for AlGaN/GaN HEMTs grown by MOVPE

Bougrioua, Z. Azize, M. Lorenzini, P.

Strategies for maintaining a low threading dislocation density in highly resistive GaN layers grown by MOVPE on sapphire or SiC substrates using Fe modulation doping are presented. Sheet resistances as high as 1E+8 Ω□ for dislocation densities lower than 8E+8 /cm² have been obtained. 2DEGs created at the AlGaN/GaN:Fe interface have good...

Uploaded on: December 4, 2022
June 1, 2004 (v1)

Conference paper

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Control of 3C-SiC/Si wafer bending by the "checker-board" carbonization method

Chassagne, Thierry Ferro, Gabriel Haas, H.

International audience

Uploaded on: December 4, 2022