H
H
Last name: HAAS
First name: Helge
International audience
No description
Schottky barrier diodes on GaN on GaN substrates are fabricated for the purposeof material and technology characterization. The epitaxial layers are grown byMOCVD. I–V measurements as a function of the temperature in the range80–480 K show ideality factor (n) and barrier height (ϕB) variations not following athermionic (TE) model. Consequently,...
In this work, measurements from Cathodo-Luminescence (CL), micro-Raman spectroscopy and Breakdown Voltage (BV) have been coupled to assess the effects of physical parameters such as threading dislocations and effective doping level homogeneity on the electrical performances of vertical GaN Schottky and PN diodes. Two different substrates from...
Power electronics have a wide range of applications, from devices operating at low voltages, for example, in portable electronics, to devices operating at high voltages, for example, in power transmission and distribution systems. Although during the past decades, devices based on silicon (Si) have dominated this field, wide-bandgap...