The interest in flexible light-emitting diodes (LEDs) is growing, and some more specific applications can also be found inbiomedical research. Compared to organic LEDs, devices based on inorganic semiconductor LEDs (ILEDs) present theadvantage of high luminance and brightness. Additionally, these ILEDs are much more promising as far as...
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April 4, 2023 (v1)Conference paperUploaded on: September 3, 2024
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November 30, 2022 (v1)Conference paper
The interest in flexible micro light-emitting diodes (μLEDs) is growing , and specific applications can be found in biomedical research. For example, in optogenetics stimulations GaN-based μLEDs are good candidates, however, LEDs with reduced dimensions, and improved flexibility (typical dimensions < 50μm and radius of curvature (ROC) down to ~...
Uploaded on: September 3, 2024 -
December 2019 (v1)Journal article
In recent years much effort has been made to increase the Sn content in GeSn alloys in order to increase direct bandgap charge carrier recombination and, therefore, to reach room temperature lasing. While being successful for the former, the increase of Sn content is detrimental, leading to increased defect concentrations and a lower thermal...
Uploaded on: December 4, 2022 -
May 29, 2023 (v1)Conference paper
We report on the fabrication and characterization of flexible blue thin-film micro-LED grown by MOVPE.Two approaches are explored to replace laser lift-off for the micro-LED device liberation from the growth substrate:the release of the micro-LED structures assisted by quasi-van der Waals epitaxy using an interfacial h-Bn layer; andthe...
Uploaded on: September 3, 2024 -
November 17, 2021 (v1)Journal article
GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap semiconductors. This growing laser technology however suffers from a number of limitations, such as poor optical confinement, lack of strain, thermal, and defects management,...
Uploaded on: December 3, 2022 -
November 17, 2021 (v1)Journal article
GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap semiconductors. This growing laser technology however suffers from a number of limitations, such as poor optical confinement, lack of strain, thermal, and defects management,...
Uploaded on: February 22, 2023 -
November 17, 2021 (v1)Journal article
GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap semiconductors. This growing laser technology however suffers from a number of limitations, such as poor optical confinement, lack of strain, thermal, and defects management,...
Uploaded on: December 3, 2022 -
November 17, 2021 (v1)Journal article
GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap semiconductors. This growing laser technology however suffers from a number of limitations, such as poor optical confinement, lack of strain, thermal, and defects management,...
Uploaded on: February 22, 2023 -
2020 (v1)Journal article
Strained GeSn alloys are promising for realizing light emitters based entirely on group IV elements. Here, we report GeSn microdisk lasers encapsulated with a SiNx stressor layer to produce tensile strain. A 300nm GeSn layer with 5.4 at. % Sn, which is an indirect band-gap semiconductor as-grown, is transformed via tensile strain engineering...
Uploaded on: December 4, 2022 -
October 21, 2020 (v1)Journal article
GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-1 arXiv:submit/3525756 [physics.app-ph] 21 Dec 2020 compatible approach. Recent GeSn laser developments rely on increasing the band structure directness, by increasing the Sn...
Uploaded on: December 4, 2022