HERTH , Etienne

The interest in flexible light-emitting diodes (LEDs) is growing, and some more specific applications can also be found inbiomedical research. Compared to organic LEDs, devices based on inorganic semiconductor LEDs (ILEDs) present theadvantage of high luminance and brightness. Additionally, these ILEDs are much more promising as far as...

The interest in flexible micro light-emitting diodes (μLEDs) is growing , and specific applications can be found in biomedical research. For example, in optogenetics stimulations GaN-based μLEDs are good candidates, however, LEDs with reduced dimensions, and improved flexibility (typical dimensions < 50μm and radius of curvature (ROC) down to ~...

We report on the fabrication and characterization of flexible blue thin-film micro-LED grown by MOVPE.Two approaches are explored to replace laser lift-off for the micro-LED device liberation from the growth substrate:the release of the micro-LED structures assisted by quasi-van der Waals epitaxy using an interfacial h-Bn layer; andthe...

In recent years much effort has been made to increase the Sn content in GeSn alloys in order to increase direct bandgap charge carrier recombination and, therefore, to reach room temperature lasing. While being successful for the former, the increase of Sn content is detrimental, leading to increased defect concentrations and a lower thermal...

GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap semiconductors. This growing laser technology however suffers from a number of limitations, such as poor optical confinement, lack of strain, thermal, and defects management,...

Abstract GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap semiconductors. This growing laser technology however suffers from a number of limitations, such as poor optical confinement, lack of strain, thermal, and defects...

GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap semiconductors. This growing laser technology however suffers from a number of limitations, such as poor optical confinement, lack of strain, thermal, and defects management,...

GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap semiconductors. This growing laser technology however suffers from a number of limitations, such as poor optical confinement, lack of strain, thermal, and defects management,...

GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap semiconductors. This growing laser technology however suffers from a number of limitations, such as poor optical confinement, lack of strain, thermal, and defects management,...