IDIR , Nadir

The onset and pinch-off voltages shift of lateral GaN field-effect rectifier diodes (L-FER) and normally-off HEMTs are studied. It is shown that a short duration of low power SF6 plasma followed by a low temperature annealing permits to get an effective and stabilized fluorine ion implantation in the AlGaN barrier, contributing to reduce the...

Schottky contacts on fluorine implanted AlGaN/GaN heterostructures with the ideality factor close to unity and low on-voltage threshold are presented in this paper. An SF 6 plasma anode pretreatment followed by a specific low-temperature annealing is also compared to a nonannealed sample. In addition, physical-model parameters are extracted by...