LAÜGT , M.

In order to get semi‐insulating GaN layers with a low dislocation density on sapphire, two kinds of Fe doping were explored by low pressure metalorganic vapour phase epitaxy (LP‐MOVPE): the modulation doping (MD) and the continuous doping (CD). The high crystalline quality and the semi‐insulating character are obtained in the case of the Fe‐MD...

Strategies for maintaining a low threading dislocation density in highly resistive GaN layers grown by MOVPE on sapphire or SiC substrates using Fe modulation doping are presented. Sheet resistances as high as 1E+8 Ω□ for dislocation densities lower than 8E+8 /cm² have been obtained. 2DEGs created at the AlGaN/GaN:Fe interface have good...

New conditions for one‐step ELO were implemented to grow coalesced (11equation image0) non‐polar and (11equation image2) semi‐polar GaN layers starting, respectively, from R ‐ and M ‐plane sapphire. A great part of the stacking faults (SFs) and dislocations are filtrated resulting in GaN material with better structural and optical properties....

(Al,Ga)N/GaN quantum wells have been studied by temperature-dependent luminescence and reflectivity. The samples were grown by molecular beam epitaxy on (0001) sapphire substrates, and well widths were varied from 3 to 15 monolayers (ML's) with a 2-ML increment, thus providing a reliable data set for the study of the well width dependence of...

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