LAHOURCADE , Lise

Semipolar (1122 ) GaN layers grown by metalorganic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) are studied by transmission electron microscopy (TEM). The layers exhibit numerous defects with different geometries in comparison to the growth along the c-axis, they are identified as mostly partial dislocations, basal and prismatic...

In group-III nitride quantum wells, indirect excitons (IXs) are naturally formed because the electron-hole pair is separated along the growth (0001) axis by strong internal electric fields. These IXs therefore exhibit strong permanent dipole moments and extremely long radiative lifetimes (> 10µs). Previous extensive studies of IXs in...

Light emission in polar group-III nitride quantum wells (QWs) optically pumped at densities significantly below the lasing threshold is usually interpreted in terms of excitons. Whereas thin GaN QWs with fast radiative lifetimes are employed in light-emitting devices, the excitons in thick QWs (typ. 7nm) are characterized by a non-zero dipole...

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