In this paper, AlN-based HEMTs on silicon are demonstrated using NH3-MBE. The spirit is to get the highest 2DEG density theoretically achievable in nitrides while keeping thin barrier thickness, which is mandatory to achieve high frequency performances. To do that, the strategy consists in growing a relaxed AlN ...
-
July 24, 2017 (v1)Conference paperUploaded on: December 4, 2022
-
May 14, 2017 (v1)Conference paper
Using NH3-MBE, AlN-based HEMTs on silicon are demonstrated for the first time. Ultra-thin heterostructures typically consist of 200 nm-thick AlN buffer, followed by 20 nm-thick strained GaN channel, 3-10 nm-thick AlN barrier. 2DEG densities (Ns) are measured as a function of AlN barrier thicknesses. Value as high as 2.7x10 13 cm-2 is measured...
Uploaded on: December 4, 2022 -
May 2018 (v1)Journal article
International audience
Uploaded on: December 4, 2022 -
July 3, 2023 (v1)Conference paper
National audience
Uploaded on: October 11, 2023 -
October 28, 2022 (v1)Journal article
In the first part of this paper, we present a model that explains and determines quantitatively the twists between nucleation islands in the case of a Volmer–Weber heteroepitaxial growth of tetrahedrally coordinated semiconductors along hexagonal orientations. These twists are caused by the network of the screw components of the 60° misfit...
Uploaded on: February 22, 2023 -
September 2, 2012 (v1)Conference paper
International audience
Uploaded on: February 28, 2023 -
May 13, 2024 (v1)Conference paper
Group III-V/group IV epitaxy has recently attracted much interest for applications especially in integrated photonics, or solar energy harvesting devices. For years, the pioneering works of H. Kroemer [1] that successfully identified the key issues, were taken as a reference for the understanding of III-V/Si heteroepitaxy, but recent...
Uploaded on: October 16, 2024 -
August 7, 2017 (v1)Conference paper
International audience
Uploaded on: February 28, 2023 -
June 18, 2018 (v1)Conference paper
International audience
Uploaded on: December 4, 2022 -
July 29, 2018 (v1)Conference paper
International audience
Uploaded on: December 4, 2022 -
February 17, 2019 (v1)Conference paper
International audience
Uploaded on: December 4, 2022 -
June 12, 2018 (v1)Journal article
Here, we experimentally and theoretically clarify III-V/Si crystal growth processes. Atomically resolved microscopy shows that monodomain three-dimensional islands are observed at the early stages of AlSb, AlN, and GaP epitaxy on Si, independently of misfit. It is also shown that complete III-V/Si wetting cannot be achieved in most III-V/Si...
Uploaded on: December 4, 2022 -
September 2, 2018 (v1)Conference paper
In this work, we experimentally and theoretically clarify the III-V/Si crystal growth processes. Atomically-resolved microscopy shows that mono-domain 3D islands are observed at theearly stages of AlSb, AlN and GaP molecular beam epitaxy on Si, independently of strain. It is also shown that complete III-V/Si wetting cannot be achieved in most...
Uploaded on: December 4, 2022