LARGEAU , Ludovic

Using NH3-MBE, AlN-based HEMTs on silicon are demonstrated for the first time. Ultra-thin heterostructures typically consist of 200 nm-thick AlN buffer, followed by 20 nm-thick strained GaN channel, 3-10 nm-thick AlN barrier. 2DEG densities (Ns) are measured as a function of AlN barrier thicknesses. Value as high as 2.7x10 13 cm-2 is measured...

In this paper, AlN-based HEMTs on silicon are demonstrated using NH3-MBE. The spirit is to get the highest 2DEG density theoretically achievable in nitrides while keeping thin barrier thickness, which is mandatory to achieve high frequency performances. To do that, the strategy consists in growing a relaxed AlN ...

In the first part of this paper, we present a model that explains and determines quantitatively the twists between nucleation islands in the case of a Volmer–Weber heteroepitaxial growth of tetrahedrally coordinated semiconductors along hexagonal orientations. These twists are caused by the network of the screw components of the 60° misfit...

National audience

International audience

International audience

Group III-V/group IV epitaxy has recently attracted much interest for applications especially in integrated photonics, or solar energy harvesting devices. For years, the pioneering works of H. Kroemer [1] that successfully identified the key issues, were taken as a reference for the understanding of III-V/Si heteroepitaxy, but recent...