We comparatively study the onset of photo-induced non-radiative intrinsic Auger recombination processes for red, yellow and green light emitting InGaNsingle bondGaN hetero-structures grown along the polar orientation. We find a dramatic reduction of the photo excitation densities triggering the domination of Auger effect with increasing...
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March 15, 2017 (v1)Journal articleUploaded on: February 28, 2023
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October 17, 2016 (v1)Journal article
The Auger effect and its impact on the internal quantum efficiency (IQE) of yellow light emitters based on silicon-doped InGaN–AlGaN–GaN quantum wells are investigated by power dependence measurement and using an ABC model. Photoluminescence intensity recorded as a function of excitation power density follows a linear dependence up to a...
Uploaded on: February 28, 2023 -
April 6, 2015 (v1)Journal article
XE examine the impact of the heterostructure design at the scale of the structural and optical properties for yellow light emission
Uploaded on: March 26, 2023