MADOURI , A.

The recent achievement of a continuous silicon monocrystalline thin film on 3C-SiC epilayers deposited on silicon substrates has opened the field for new microstructures. In this work, this original hetero-structure is the basis for the elaboration of an entire cantilever for atomic force microscopy. The hetero-epitaxially grown silicon layer...

Cantilevers with resonance frequency ranging from 1 MHz to 100 MHz have been developed for dynamic atomic force microscopy. These sensors are fabricated from 3C-SiC epilayers grown on Si(100) substrates by low pressure chemical vapor deposition. They use an on-chip method both for driving and sensing the displacement of the cantilever. A first...