MANTACH , Rami

The epitaxial growth of III-N semiconductors in non-or semi-polar orientations avoids the effects associated with the existence of internal fields in GaN-based hetero-structures usually epitaxial in the cdirection. The thesis work that we will present is part of the search for ways to optimize the crystalline structure of the epitaxial layers...

International audience

We demonstrate the growth of almost strain-free (10-11) semipolar GaN on silicon-on-insulator (SOI) substrates, with no meltbacketching and with a defect density strongly reduced compared to semipolar templates grown on patterned silicon substrates.This is carried out using SOI substrates with a very thin (∼150 nm) 6° off (001) Si top layer. By...