MASSIES , J.

Porous GaN and (Ga,In)N/GaN single quantum well layers are fabricated using a selective area sublimation (SAS) technique from initially smooth and compact 2-dimensional (D) layers grown on Si(111) or c-plane sapphire substrates. The photoluminescence properties of these porous layers are measured and compared to reference non-porous samples....

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The electronic structure of AlN in wurtzite and zinc-blende phases is studied experimentally and theoretically. By using x-ray emission spectroscopy, the Al 3p, Al 3s and N 2p spectral densities are obtained. The corresponding local and partial theoretical densities of states (DOS), as well as the total DOS and the band structure, are...

The electronic structure of AlN in wurtzite and zinc-blende phases is studied experimentally and theoretically. By using x-ray emission spectroscopy, the Al 3p, Al 3s and N 2p spectral densities are obtained. The corresponding local and partial theoretical densities of states (DOS), as well as the total DOS and the band structure, are...

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In a recent publication [N. Antoine-Vincent, F. Natali, D. Byrne, A. Vasson, P. Disseix, J. Leymarie, M. Leroux, F. Semond, J. Massies, Phys. Rev. B 68 (2003) 153313], we have highlighted for the first time the exciton–photon strong coupling in a GaN-based microcavity and obtained a Rabi splitting of 31 meV persistent at 77 K. Our aim is now to...

We report the experimental observation of the exciton–photon strong coupling regime in a GaN microcavity. The structure has been grown by molecular beam epitaxy on a Si(111) substrate. The upper mirror is a SiO2/Si3N4 dielectric mirror and the silicon substrate acts as the bottom one. Angle resolved reflectivity and photoluminescence...

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In this work, AlGaN/GaN high electron mobility transistors have been grown by ammonia source molecular beam epitaxy (MBE) on silicon (1 1 1), silicon carbide and GaN templates on sapphire. The structural and electrical properties of these layers have been studied in order to determine the impact of substrate choice and buffer layer on active...

We present experimental results demonstrating strong-light matter coupling at low and room temperature in bulk GaN microcavities. Angle dependent reflectivity measurements demonstrate strong-coupling with a Rabi-energy of 50meV at room temperature which is well reproduced with transfer matrix simulations. The absence of strong coupling in the...

We present experimental results demonstrating strong-light matter coupling at low and room temperature in bulk GaN microcavities with epitaxial (Al,Ga)N Bragg mirrors grown on silicon (111). At low temperature, the strong coupling of both the A and B excitonic features of GaN with the cavity mode is clearly resolved in the microcavity. At room...

We present experimental results demonstrating strong light-matter coupling at room temperature in bulk GaN microcavities grown on silicon(111). Simple low finesse planar microcavities show a Rabi energy as high as 60 meV at room temperature. We also demonstrate room temperature strong-coupling from a bulk GaN microcavity with epitaxial...

We present experimental results demonstrating strong light-matter coupling at room temperature in bulk GaN microcavities grown on silicon(111). Simple low finesse planar microcavities show a Rabi energy as high as 60 meV at room temperature. We also demonstrate room temperature strong-coupling from a bulk GaN microcavity with epitaxial...

We present experimental results demonstrating strong-light matter coupling at low and room temperature in bulk GaN microcavities with epitaxial (Al,Ga)N Bragg mirrors grown on silicon (111). At low temperature, the strong coupling of both the A and B excitonic features of GaN with the cavity mode is clearly resolved in the microcavity. At room...

We present experimental results demonstrating strong-light matter coupling at low and room temperature in bulk GaN microcavities. Angle dependent reflectivity measurements demonstrate strong-coupling with a Rabi-energy of 50meV at room temperature which is well reproduced with transfer matrix simulations. The absence of strong coupling in the...

We analyze the low temperature photoluminescence properties of two multi-layer stacking of GaN/AlN quantum dots. We report drastic differences of linewidths between continuous wave and time-resolved photoluminescence experiments. After the pulsed excitation, time-resolved photoluminescence reveals a substantial red shift of the line, which...

Piezoelectric effects on the optical properties of GaN/AlN quantum dots have been investigated by both continuous-wave and time-resolved photoluminescence (TRPL) measurements. The increase in excitation density in CW-PL leads to a blue shift of the transition energy. The TRPL measurements reveal a very large blue-shift (0.6 eV) of the PL peak...