OUGAZZADEN , Abdallah

Aluminium Gallium Nitride (Al y Ga 1-y N) quantum dots (QDs) with thin sub-µm Al x Ga 1-x N layers (with x > y) were grown by molecular beam epitaxy on 3 nm and 6 nm thick hexagonal boron nitride (h-BN) initially deposited on c-sapphire substrates. An AlN layer was grown on h-BN and the surface roughness was investigated by atomic force...

The interest in flexible micro light-emitting diodes (μLEDs) is growing , and specific applications can be found in biomedical research. For example, in optogenetics stimulations GaN-based μLEDs are good candidates, however, LEDs with reduced dimensions, and improved flexibility (typical dimensions < 50μm and radius of curvature (ROC) down to ~...

In this study, AlN epilayers were grown by ammonia-assisted molecular beam epitaxy on 3 nm h-BN grown on c-sapphire substrates. Their structural properties were investigated by comparing as-grown and postgrowth annealed layers. The role of annealing on the crystalline quality and surface morphology was studied as a function of AlN thickness and...

We report on the fabrication and characterization of flexible blue thin-film micro-LED grown by MOVPE.Two approaches are explored to replace laser lift-off for the micro-LED device liberation from the growth substrate:the release of the micro-LED structures assisted by quasi-van der Waals epitaxy using an interfacial h-Bn layer; andthe...