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December 2004 (v1)Journal articleUploaded on: December 4, 2022
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2005 (v1)Conference paper
International audience
Uploaded on: December 4, 2022 -
2005 (v1)Journal article
A reliable criterion for SEU occurrence simulation is presented. It expresses the relationship existing at threshold between the magnitude and duration of the ion-induced parasitic pulse. This criterion can be obtained byboth three-dimensional device and SPICE simulations. Using this criterion, the simulated and experimental SER on 130 and 250...
Uploaded on: December 4, 2022 -
2005 (v1)Journal article
This paper presents a new 3D methodology to simulate Multiple Bit Upsets in commercial SRAMs. Experiments are performed at the Los Alamos neutron facility on 90, 130, and 250 nm SRAMs and compared to Monte-Carlo simulations. A discussion on ions inducing MBUs is also proposed.
Uploaded on: February 22, 2023 -
2005 (v1)Journal article
This paper presents a new 3D methodology to simulate Multiple Bit Upsets in commercial SRAMs. Experiments are performed at the Los Alamos neutron facility on 90, 130, and 250 nm SRAMs and compared to Monte-Carlo simulations. A discussion on ions inducing MBUs is also proposed.
Uploaded on: December 4, 2022 -
2004 (v1)Conference paper
International audience
Uploaded on: December 4, 2022 -
2005 (v1)Conference paper
International audience
Uploaded on: December 4, 2022 -
December 2003 (v1)Journal article
The aim of this work is to show the contribution of nuclear events occurring with oxygen nuclei in SRAM-oxide such as SiO2 and emphasize that they are likely to increase the soft error rate by about several tens of percent. Recoil energies are calculated with a dedicated subroutine, which accounts for elastic and nonelastic reactions in the...
Uploaded on: December 4, 2022 -
December 2002 (v1)Journal article
A Monte Carlo approach is used to obtain statistical information on the effect of the spatial distribution of the numerous secondary ions involved in neutron induced soft error rates (SER). The sorting criteria for the occurrence of upset are derived from a simplification of previous work on full-cell three-dimensional (3-D) SRAM device...
Uploaded on: December 4, 2022