PATRIARCHE , Gilles

Surface diffusion is known to be of prime importance in the growth of semiconductor nanowires. In this work, we used ZnMgO layers as markers to analyze the growth mechanisms and kinetics during the deposition of ZnMgO/ZnO multilayered shells by molecular beam epitaxy on previously grown ZnO nanowire cores (so called core-shell...

The formation and propagation of a polariton condensate under tightly focused excitation is investigated in a ZnO microcavity both experimentally and theoretically. 2D near-field and far-field images of the condensate are measured under quasi-continuous non-resonant excitation. The corresponding spatial profiles are compared to a model based on...

We report on the fabrication and characterization of flexible blue thin-film micro-LED grown by MOVPE.Two approaches are explored to replace laser lift-off for the micro-LED device liberation from the growth substrate:the release of the micro-LED structures assisted by quasi-van der Waals epitaxy using an interfacial h-Bn layer; andthe...

Spatial observation and optical manipulation of polariton quantum liquids are raising a large interest in the studies of polariton condensates in microcavities [1]. In this work, we report the study of polariton condensates in a semi-hybrid ZnO microcavity where the condensation of polaritons up to room temperature has been achieved. This...

ZnO est un matériau semiconducteur présentant des excitons forts, en terme de force d'oscillateur et d'énergie de liaison. Il est donc particulièrement intéressant pour la génération et le contrôle de condensats de polaritons, jusqu'à température ambiante.La réalisation de microcavités ZnO planaires de grand facteur de qualité a longtemps...

We create polariton clouds and polariton condensates to characterize their propagation at different temperatures. Our experimental results show that in a thickness gradient microcavity, polariton propagation is mainly ballistic and does not depend on the microcavity gradient. Above threshold, we compare the experimental results to a theoretical...

This paper presents the growth and characterization of three-dimensional structures using metal-organic (or organometallic) chemical precursors like M(CH3)3, where M is a metal. Their morphology depends principally on growth temperature and conditions at the surface of the substrate. These 3D structures can be separated into two classes: i) one...

Group III-V/group IV epitaxy has recently attracted much interest for applications especially in integrated photonics, or solar energy harvesting devices. For years, the pioneering works of H. Kroemer [1] that successfully identified the key issues, were taken as a reference for the understanding of III-V/Si heteroepitaxy, but recent...

ZnO is a wide bandgap semiconductor with strong excitonic properties, in particular a large oscillator strength and a large exciton binding energy. It therefore raises a strong interest for the generation and control of polariton condensates up to room temperature.The realization of planar ZnO microcavities with good quality factors has long...

We report exciton-polariton condensation in a new family of fully hybrid ZnO based microcavity demonstrating the best-quality ZnO material available (a bulk substrate), a large quality factor (~4000) and large Rabi splittings (~240 meV). Condensation is achieved between 4 and 300 K and for excitonic fractions ranging between 17% and 96 %, which...

ZnO is a wide bandgap semiconductor with strong excitonic properties, in particular a large oscillator strength and a large exciton binding energy. It therefore raises a strong interest for the demonstration of polariton lasing up to room temperature with microcavities in the strong exciton-photon coupling regime. The strong coupling regime has...

ZnO is a wide bandgap semiconductor with strong excitonic properties, in particular a large oscillator strength and a large exciton binding energy. It therefore raises a strong interest for the generation and control of polariton condensates up to room temperature. We have recently reported the condensation of polaritons in a bulk ZnO...

A ZnO planar optical microcavity displaying room-temperature polariton lasing has been fabricated. The cavity combines optimum crystalline quality, as given by the ZnO bulk single-crystal substrate employed as active region, and optimum photonic quality, as obtained by the use of two dielectric SiO2/HfO2 Bragg mirrors. A maximum cavity quality...

ZnO is a wide bandgap semiconductor with strong excitonic properties, in particular a large oscillator strength and a large exciton binding energy. It therefore raises a strong interest for the demonstration of polariton lasing up to room temperature with microcavities in the strong exciton-photon coupling regime. The strong coupling regime has...

ZnO is a wide bandgap semiconductor with strong excitonic properties, in particular a large oscillator strength and a large exciton binding energy. It therefore raises a strong interest for the generation and control of polariton condensates up to room temperature. We have recently reported the condensation of polaritons in a bulk ZnO...

GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap semiconductors. This growing laser technology however suffers from a number of limitations, such as poor optical confinement, lack of strain, thermal, and defects management,...

GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap semiconductors. This growing laser technology however suffers from a number of limitations, such as poor optical confinement, lack of strain, thermal, and defects management,...

GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap semiconductors. This growing laser technology however suffers from a number of limitations, such as poor optical confinement, lack of strain, thermal, and defects management,...

GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap semiconductors. This growing laser technology however suffers from a number of limitations, such as poor optical confinement, lack of strain, thermal, and defects management,...

Abstract GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap semiconductors. This growing laser technology however suffers from a number of limitations, such as poor optical confinement, lack of strain, thermal, and defects...

International audience

International audience