PINAULT , Marie-Amandine

We have performed transmittance and piezomodulated transmittance measurements of as-grown GaAsN layers on GaAs substrates. The absorption shows energy an splitting of the ground state transition and a simultaneous increase of the splitting with the increase of the N content. This indicates the presence of a strain, which lifts the light- and...

We study by time resolved photoluminescence (TRPL) low N and In content GaInNAs (GINA) alloy layers grown by molecular beam epitaxy on GaAs substrate. The TRPL experiments show the coexistence and the carrier exchanges between bound- and free-exciton states, in this kind of alloy. Temperature dependent experiments demonstrate the thermal...

Low-temperature time-resolved photoluminescence (TR-PL) experiments were used to study the dependence on nitrogen composition of the nature, the energy and the dynamics of radiative carrier recombinations in GaAs1-xNx alloys. Epitaxial layers were grown on [001] GaAs substrates by molecular beam epitaxy using solid sources for group-III and As...