May 2018 (v1)
Journal article
In this work, crack statistics are developed for MOCVD-grown 12 μm thick GaN on patterned Si substrate for different sizes, trench widths and trench heights of the mesas. Optical microscope is used to obtain the percentage ofcracked mesas in order to develop the crack statistics. The crack statistics show that the size and the trench height of...
Uploaded on: December 4, 2022