ROCCAFORTE , Fabrizio

The electronic properties of the graphene (Gr) Schottky junction with an Al 0.22 Ga 0.78 N/GaN heterostructure on silicon have been investigated, both experimentally and using ab-initio DFT calculations. A peculiar high n-type doping (1.1×10 13 cm-2), observed for Gr in contact with AlGaN, was explained by the combined effect of Fermi level...

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In this paper, we present the preparation of few-layer MoS2 films on single-crystal sapphire, as well as on heteroepitaxial GaN templates on sapphire substrates, using the pulsed laser deposition (PLD) technique. Detailed structural and chemical characterization of the films were performed using Raman spectroscopy, X-ray photoelectron...

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