ROCHAT , N

In recent years, vertical GaN-on-GaN devices have emerged as potential substitutes for conventional lateral power devices like GaN-on-Si, GaN-on-Sapphire and SiC devices. This promise is due to the vertical structure that offers a pathway to higher breakdown voltages and lower on-resistance allowing to fully benefit of the superior properties...

A multi-microscopy investigation of a GaN tunnel junction (TJ) grown on an InGaN-based light emitting diode (LED) has been performed. The TJ consists of a heavily Ge-doped n-type GaN layer grown by ammonia-based molecular-beam epitaxy on a heavily Mg-doped p-type GaN thin layer, grown by metalorganic vapor phase epitaxy. A correlation of atom...

International audience

A multi-microscopy investigation of a GaN tunnel junction (TJ) grown on an InGaN-based light emitting diode (LED) has been performed. The TJ consists of a heavily Ge-doped n-type GaN layer grown by ammonia-based molecular-beam epitaxy on a heavily Mg p-type GaN thin layer, grown by metalorganic vapor phase epitaxy. A correlation of atom probe...