SINHA , Arun Kumar

Piezoelectric oxide semiconductor field effect transistor (i.e. POSFET) sensor is a class of piezoelectric semiconductor devices which has been proposed for tactile sensing. As these sensors have piezoelectric material on top of the NMOS transistor gate, their bias point behaviour became a matter of speculation for a designer. Therefore, while...

This paper presents an approach to realize very high value of resistance through well to source connected PMOS devices working in weak inversion. The derivations of formulas were based on the concept of EKV equation at weak inversion. Analysis has been done to correlate conductance with the biasing voltage. The developed approach has been...

This paper presents the bias circuit design for realizing the high value resistance at the floating gate of Piezoelectric Oxide Semiconductor Field Effect Transistor (POSFET). The application of POSFET has been reported in papers for tactile sensing. High value resistance has been achieved through well to drain connected PMOS device working in...

In this paper, we propose a design solution for implementing high-value resistance circuit, intended to bias the floating gate of PolyVinyliDene Fluorine (PVDF) based tactile sensors. The solution was proposed to design circuits based on Twin-tub and N-well processes. The formulations of mathematical equations were derived from EKV model. Our...

In this paper we present series of experimental results showing the vulnerability of tactile sensors called by name Piezoelectric Oxide Semiconductor Field Effect Transistors (POSFETs) toward light and bare touch. In fact these sensors have customized transistors on exposed silicon substrate/well. The result shows that by using a naked sensor...

In this paper we presents the algorithms for I-V measurements of the diode and FET devices using Keithley® instruments. The data from the I-V measurements was acquired and processed according to the proposed characterization algorithms. The characterization algorithms were used in the extractions of transconductance coefficient, threshold...

In this paper we presents a signal conditioning unit working at single supply. The unit consists of high pass filter, buffer and a cascaded stage of low pass filter with amplifier. The order of high pass filter and low pass filter was first and second respectively. The unit was realized by using minimum off-the-shelf components through...

In this paper, we present measurement results from a prototype chip (fabricated in 130 nm CMOS technology), designed to extract maximum power from a Thermoelectric Generator (TEG). From analytical expression, we prove that the maximum extracted power is around 75% of the available power in a TEG, without using a closed loop maximum peak power...