SAUVAGE , Sebastien

We demonstrate high-spatial resolution imaging of localized cavity modes through third-harmonic frequency conversion. The experiments are performed with a III-nitrideon-silicon photonic platform. The resonant cavities are formed within suspended two-dimensional photonic crystals and are excited with a continuous-wave excitation around 1550 nm....

We demonstrate phase-matched second harmonic generation in gallium nitride on silicon microdisks. The microdisks are integrated with side-coupling bus waveguides in a two-dimensional photonic circuit. The second harmonic generation is excited with a continuous wave laser in the telecom band. By fabricating a series of microdisks with diameters...

III-nitride-on-silicon L3 and H2 photonic crystal cavities with resonances down to 315 nm and quality factors up to 1085 at 337 nm have been demonstrated. The reduction of quality factor (Q) with decreasing wavelength is investigated. Besides the QW absorption below 340 nm a noteworthy contribution is attributed to the residual absorption...

The main interest of group-III-nitride nanophotonic circuits is the integration of active structures and laser sources. A photonic platform of group-III-nitride microdisk lasers integrated on silicon and emitting in the blue spectral range is demonstrated. The active microdisks are side-coupled to suspended bus waveguides, and the coupled...

Nanophotonic circuits using group III-nitrides on silicon are still lacking one key component: efficient electrical injection. In this paper we demonstrate an electrical injection scheme using a metal microbridge contact in thin III-nitride on silicon mushroom-type microrings that is compatible with integrated nanophotonic circuits with the...

GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-1 arXiv:submit/3525756 [physics.app-ph] 21 Dec 2020 compatible approach. Recent GeSn laser developments rely on increasing the band structure directness, by increasing the Sn...