We report on the impact of structural defects on mid-infrared intersubband (ISB) properties of GaN/(Al, Ga)N heterostructures grown by ammonia molecular beam epitaxy (NH 3 MBE). Twenty-period GaN/(Al, Ga)N multi-quantum-well (MQW) heterostructures are grown on co-loaded a-plane freestanding GaN substrates and heteroepitaxial a-plane GaN on...
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November 22, 2021 (v1)Journal articleUploaded on: December 3, 2022
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May 2020 (v1)Journal article
Semipolar/nonpolar GaN-based optoelectronic devices become attractive due to several advantages such as alleviation of quantum-confinement Stark effect, high polarization ratio and optical gain. High performance semipolar/nonpolar InGaN light-emitting diodes (LEDs) and laser diodes (LDs) grown on semipolar/nonpolar bulk GaN substrate have been...
Uploaded on: December 4, 2022