Wurtzitic ZnO/(Zn,Mg)O quantum wells grown along the (0001) direction permit unprecedented tunability of the short-range spin exchange interaction. In the context of large exciton binding energies and electron-hole exchange interaction in ZnO, this tunability results from the competition between quantum confinement and giant quantum confined...
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June 20, 2006 (v1)PublicationUploaded on: December 3, 2022
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April 7, 2008 (v1)Conference paper
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April 7, 2008 (v1)Conference paper
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October 6, 2008 (v1)Conference paper
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October 22, 2006 (v1)Conference paper
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October 6, 2008 (v1)Conference paper
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June 20, 2008 (v1)Journal article
We report micro-photoluminescence studies of single GaN/AlN quantum dots grown along the (0001) crystal axis by molecular beam epitaxy on Si(111) substrates. The emission lines exhibit a linear polarization along the growth plane, but with varying magnitudes of the polarization degree and with principal polarization axes that do not necessarily...
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June 19, 2009 (v1)Conference paper
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May 15, 2006 (v1)Conference paper
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March 15, 2004 (v1)Publication
We analyze the low temperature photoluminescence properties of two multi-layer stacking of GaN/AlN quantum dots. We report drastic differences of linewidths between continuous wave and time-resolved photoluminescence experiments. After the pulsed excitation, time-resolved photoluminescence reveals a substantial red shift of the line, which...
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May 25, 2003 (v1)Publication
Piezoelectric effects on the optical properties of GaN/AlN quantum dots have been investigated by both continuous-wave and time-resolved photoluminescence (TRPL) measurements. The increase in excitation density in CW-PL leads to a blue shift of the transition energy. The TRPL measurements reveal a very large blue-shift (0.6 eV) of the PL peak...
Uploaded on: December 3, 2022