TARTARIN , Jean-Guy

Transfer technology is now becoming very attractive not only for new technologies such as flexible technology but also for solid state technologies when performances are limited by technological barriers that have to be overcome. In this last context, the transfer of high electron mobility transistors (HEMTs) on diamond substrates represents an...

International audience

In this letter, a record performance at 40 GHz obtained on AlGaN/GaN high electron mobility transistor (HEMT) grown on Hydride Vapor Phase Epitaxy (HVPE) Free-Standing GaN substrate is reported. An output power density of 2 W.mm-1 associated with 20.5 % power added efficiency and a linear power gain (Gp) of 4.2 dB is demonstrated for 70 nm gate...

International audience