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Last name: TCHERNYCHEVA
First name: Maria
International audience
The development of flexible optoelectronic devices has led to the appearance of new applications, ranging from wearable displays to medical implants. Hence, strategies have been developed to make flexible every component of the devices, including the light-emitting part. One such approach relies on the use of micro-or nano-light emitting diodes...
The interest in flexible light-emitting diodes (LEDs) is growing, and some more specific applications can also be found inbiomedical research. Compared to organic LEDs, devices based on inorganic semiconductor LEDs (ILEDs) present theadvantage of high luminance and brightness. Additionally, these ILEDs are much more promising as far as...
International audience
The interest in flexible micro light-emitting diodes (μLEDs) is growing , and specific applications can be found in biomedical research. For example, in optogenetics stimulations GaN-based μLEDs are good candidates, however, LEDs with reduced dimensions, and improved flexibility (typical dimensions < 50μm and radius of curvature (ROC) down to ~...
InGaN/GaN single quantum wells were grown by molecular beam epitaxy on the silicon substrate onto thin AlN and GaN buffer layers. The InGaN/GaN structure is porosified using a combination of Si x N y nanomasking and sublimation and compared with a non-porous reference. The photoluminescence efficiency at room temperature of the porosified...
International audience
International audience
We report on the fabrication and characterization of flexible blue thin-film micro-LED grown by MOVPE.Two approaches are explored to replace laser lift-off for the micro-LED device liberation from the growth substrate:the release of the micro-LED structures assisted by quasi-van der Waals epitaxy using an interfacial h-Bn layer; andthe...
We studied polarization-resolved photoluminescence originating from a ZnO-(Mg,Zn)O quantum well heterostucture embedded within an atom probe tip, i.e. a nanoscale needle-shaped sample with apex radius of several tens of nm, prepared by focused ion beam. The study was carried out within a photonic atom probe before the atom probe analysis of the...
International audience
A porous InGaN/GaN blue light-emitting diode is demonstrated using selective area sublimation. Transmission electron microscopy reveals that the structure is porous down to the Si substrate; however, the porosity is higher in the GaN buffer, while smaller pores are observed in the active region. This change of porosity between the active region...
This paper reports on the demonstration of quantum cascade detectors (QCDs) based on ZnO/ ZnMgO quantum wells (QWs) grown by molecular beam epitaxy on an m-plane ZnO substrate. The TM-polarized intersubband absorption is peaked at a 3 lm wavelength. The sample has been processed in the form of square mesas with sizes ranging from 10_10 lm2 up...