THERON , Didier

This paper presents a Young's modulus extraction method for thin film group III-nitrides materials such as GaN, AlN, and its ternary AlGaN. The AlGaN/GaN heterostructures are grown by molecular beam epitaxy on Si (111) substrate and designed for MEMS applications. Various cantilevers with a width of 10 µm and lengths going from 100 to 310 µm...

We present the first results about microelectromechanical (MEMS) resonators fabricated on epitaxial nitride semiconductors with thin buffers engineered for MEMS and NEMS applications. These results assess the use of thin buffers for GaN MEMS fabrication. On a 700 nm thick AlGaN/GaN epilayer, a high tensile stress is observed to increase the...

National audience

The properties of a new class of electromechanical resonators based on GaN are presented. By using the two-dimensional electron gas (2-DEG) present at the AlGaN/GaN interface and the piezoelectric properties of this heterostructure, we use the R-HEMT (Resonant High Electron Mobility Transistor) as an active piezoelectric transducer up to 5MHz....

International audience