TOURNIÉ , Eric

We have performed transmittance and piezomodulated transmittance measurements of as-grown GaAsN layers on GaAs substrates. The absorption shows energy an splitting of the ground state transition and a simultaneous increase of the splitting with the increase of the N content. This indicates the presence of a strain, which lifts the light- and...

We study by time resolved photoluminescence (TRPL) low N and In content GaInNAs (GINA) alloy layers grown by molecular beam epitaxy on GaAs substrate. The TRPL experiments show the coexistence and the carrier exchanges between bound- and free-exciton states, in this kind of alloy. Temperature dependent experiments demonstrate the thermal...

Low-temperature time-resolved photoluminescence (TR-PL) experiments were used to study the dependence on nitrogen composition of the nature, the energy and the dynamics of radiative carrier recombinations in GaAs1-xNx alloys. Epitaxial layers were grown on [001] GaAs substrates by molecular beam epitaxy using solid sources for group-III and As...

Group III-V/group IV epitaxy has recently attracted much interest for applications especially in integrated photonics, or solar energy harvesting devices. For years, the pioneering works of H. Kroemer [1] that successfully identified the key issues, were taken as a reference for the understanding of III-V/Si heteroepitaxy, but recent...

International audience

International audience

International audience

International audience

Here, we experimentally and theoretically clarify III-V/Si crystal growth processes. Atomically resolved microscopy shows that monodomain three-dimensional islands are observed at the early stages of AlSb, AlN, and GaP epitaxy on Si, independently of misfit. It is also shown that complete III-V/Si wetting cannot be achieved in most III-V/Si...

In this work, we experimentally and theoretically clarify the III-V/Si crystal growth processes. Atomically-resolved microscopy shows that mono-domain 3D islands are observed at theearly stages of AlSb, AlN and GaP molecular beam epitaxy on Si, independently of strain. It is also shown that complete III-V/Si wetting cannot be achieved in most...