International audience
International audience
We report magnetoresistance measurements on epitaxial films of the intrinsic ferromagnetic semiconductor GdN electron doped with ∼1020cm−3 to ∼1021cm−3. The magnetoresistance across the temperature range of 10–300 K is dominated by a reduction of spin-disorder scattering in the presence of a magnetic field, imposing a resistance reduction of...
The polarization of the light emitted by an ultraviolet light-emitting diode (LED) has a direct impact on the device performance: a transverse electric polarization of the emission is preferred for extraction from the surface of the diode grown along the c axis. While this is the case for most UV LEDs grown on AlN, this state of events could be...
We present a ferromagnetic material with full spin-polarization, but with zero net moment (a magnetic moment compensation point). The compensation of the magnetic moment stems from the combination of spin-dominated and orbital-dominated lanthanide ions in solid-solutions of the rare-earth mononitrides and is robust over a range of temperatures...
A unique bulk-origin perpendicular magnetic anisotropy (PMA) is reported in thin films of the cubic ferromagnetic semiconductor GdxSm1−xN. PMA behavior is clearly signaled by in-vs-out-of-plane magnetic hysteresis showing out-of-plane remanence of ∼80% of the saturation magnetization in films with up to 30% Gd. Anomalous Hall effect data show...