November 22, 2021 (v1)
Journal article
We report on the impact of structural defects on mid-infrared intersubband (ISB) properties of GaN/(Al, Ga)N heterostructures grown by ammonia molecular beam epitaxy (NH 3 MBE). Twenty-period GaN/(Al, Ga)N multi-quantum-well (MQW) heterostructures are grown on co-loaded a-plane freestanding GaN substrates and heteroepitaxial a-plane GaN on...
Uploaded on: December 3, 2022