AL KHALFIOUI , Mohamed

A unique bulk-origin perpendicular magnetic anisotropy (PMA) is reported in thin films of the cubic ferromagnetic semiconductor GdxSm1−xN. PMA behavior is clearly signaled by in-vs-out-of-plane magnetic hysteresis showing out-of-plane remanence of ∼80% of the saturation magnetization in films with up to 30% Gd. Anomalous Hall effect data show...

We build new material descriptors to predict the band gap and the work function of 2D materials by tree-based machine-learning models. The descriptor's construction is based on vectorizing property matrices and on empirical property function, leading to mixing features that require low-resource computations. Combined with database-based...

AlGaN based light emitting diodes (LEDs) will play a key role for the development of applications in the ultra-violet (UV). In the UVB region (280–320 nm), phototherapy and plant lighting are among the targeted uses. However, UVB LED performances still need to be improved to reach commercial markets. In particular, the design and the...

International audience

Photoluminescence study of Mg-doped GaN and AlxGa1-xN (x<0.4) grown by molecular epitaxy

Effect of Temperature on Electrical Transport Properties of MBE grown Mg-doped GaN and AlGaN

International audience

In the case of molecular beam epitaxy (MBE), the Mg acceptors are electrically active in the as‐grown material and a priori no additional annealing procedure is necessary. However, there are still some peculiarities in the electrical properties of ammonia‐process grown GaN:Mg and some annealing effect can be observed. Additionally, the...

Electrical transport (resistivity and Hall Effect) have been studied in silicon doped aluminum nitride (AlN) thick epitaxial layers from 250 K up to 1000 K. The investigated samples, grown by molecular beam epitaxy were characterized by n-type conduction with an ambient temperature free carrier concentration of about ~ 1 x 10^15 cm^3. The donor...

Propane/hydrogen CVD growth of graphene on SiC, studied since 2010,1 consists simply to grow graphene from propane in a hydrogen/argon atmosphere. The presence of hydrogen in the gas phase promotes Si excess on the surface, hence making impossible graphene growth without propane flow.2 This makes propane/hydrogen CVD very different from silicon...

International audience

The development of photonic platforms for the visible or ultra-violet spectral range represents a major challenge. In this article, we present an overview of the technological solutions available on the market. We discuss the pros and cons associated with heterogeneous or monolithic integration. We specifically focus on the III-nitride platform...

AlyGa1−yN quantum dots (QDs) have been grown by molecular beam epitaxy on AlxGa1−xN (0001) using a 2-dimensional–3-dimensional growth mode transition that leads to the formation of QDs. QDs have been grown for Al compositions y varying between 10% and 40%. The influence of the active region design [composition y, QD height, and bandgap...

Deep ultraviolet (DUV) light emitting diodes (LED) are expected to be the next generation of UV sources, offering significant advantages such as compactness, low consumption and long lifetimes. Yet, improvements of their performances are still required and the potential of AlyGa1-yN quantum dots as DUV emitters is investigated in this study....

Quantum Dot based UV Light Emitting Diodes