BHAT , Nagesh

III-Nitrides (GaN, AlN, InN, and their alloys) have gained prominence in integrated photonics in recent years, due to their exceptional properties like direct band gap, wide optical transparency from UV to NIR (0.7- 6.2 eV), and remarkable nonlinear optical properties (GaN(χ(2)33 ) ∼ -10 pm/V, AlN(χ(2)33 ) ∼ 8 pm/V). Unlike Silicon-based...

III-Nitride semiconductors offer a versatile platform for integrated photonic circuits operating from the ultraviolet to the near-infrared spectral range. Either pure AlN or pure GaN waveguiding layers have usually been investigated so far. In this work, we report on the study of GaN/AlN bilayers epitaxially-grown on a sapphire substrate for...

The development of photonic platforms for the visible or ultra-violet spectral range represents a major challenge. In this article, we present an overview of the technological solutions available on the market. We discuss the pros and cons associated with heterogeneous or monolithic integration. We specifically focus on the III-nitride platform...

Abstract ScAlN is a promising barrier material for next generation RF high electron mobility transistors, outperforming AlGaN thanks a higher 2-dimensional electron gas (2DEG) density and a thinner barrier with a lower lattice mismatch with GaN. A sub-10 nm barrier ScAlN/GaN heterostructure, grown by ammonia-source molecular beam epitaxy on...