BHAT , Nagesh

III-Nitrides (GaN, AlN, InN, and their alloys) have gained prominence in integrated photonics in recent years, due to their exceptional properties like direct band gap, wide optical transparency from UV to NIR (0.7- 6.2 eV), and remarkable nonlinear optical properties (GaN(χ(2)33 ) ∼ -10 pm/V, AlN(χ(2)33 ) ∼ 8 pm/V). Unlike Silicon-based...

III-Nitride semiconductors offer a versatile platform for integrated photonic circuits operating from the ultraviolet to the near-infrared spectral range. Either pure AlN or pure GaN waveguiding layers have usually been investigated so far. In this work, we report on the study of GaN/AlN bilayers epitaxially-grown on a sapphire substrate for...