Time-resolved photuminescence spectroscopy investigations of nonpolar homoepitaxial ZnO/(Zn,Mg)O quantum wells.
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January 21, 2012 (v1)Conference paperUploaded on: December 4, 2022
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April 4, 2011 (v1)Conference paper
Optical investigation of non polar ZnO/(Zn,Mg)O quantum wells
Uploaded on: December 3, 2022 -
June 8, 2011 (v1)Conference paper
Optical investigations of non-polar homo-epitaxial ZnO/(Zn,Mg)O quantum wells
Uploaded on: December 4, 2022 -
March 11, 2011 (v1)Journal article
We report growth of high quality ZnO/Zn0.8Mg0.2O quantum well on M-plane oriented ZnO substrates. The optical properties of these quantum wells are studied by using reflectance spectroscopy. The optical spectra reveal strong in-plane optical anisotropies, as predicted by group theory, and marked reflectance structures, as an evidence of good...
Uploaded on: December 3, 2022 -
July 9, 2017 (v1)Conference paper
The polariton emission in a microcavity is usually measured from the surface, and little is known about the actual role of guided modes below the light cone in air, that can couple to the exciton transition, collect part of the emission and contribute to polariton losses. In this work we investigate a ZnO planar microcavity with mesas. The...
Uploaded on: December 4, 2022 -
2013 (v1)Journal article
Phonon-assisted exciton formation in ZnO/(Zn, Mg)O single quantum wells grown on C-plane oriented substrates.
Uploaded on: December 4, 2022 -
October 7, 2011 (v1)Journal article
Photoluminescence spectra of nonpolar M-plane ZnO/Zn0.8Mg0.2O quantum wells exhibit strong excitonic peaks from low (10 K) to high (325 K) temperatures. We find that the total integrated intensity remains quasiconstant and that the exciton lifetime increases linearly with the temperature from a value of 750 ps at 100 K until about 2.4 ns at 325...
Uploaded on: December 3, 2022 -
July 9, 2019 (v1)Conference paper
Dipolar, or indirect excitons (IXs) offer a rich playground for both design of novel optoelectronic devices and fundamental many-body physics. Wide GaN/(AlGa)N quantum wells host a new and promising realization of such excitons. Indeed, compared to their counterparts in GaAs-based heterostructures, IXs in nitrides possess two key advantages....
Uploaded on: December 4, 2022 -
July 15, 2019 (v1)Conference paper
Dipolar, or indirect excitons (IXs) offer a rich playground for both design of novel optoelectronic devices and fundamental many-body physics. Wide GaN/(AlGa)N quantum wells host a new and promising realization of such excitons. Indeed, compared to their counterparts in GaAs-based heterostructures, IXs in nitrides possess two key advantages....
Uploaded on: December 4, 2022 -
January 2021 (v1)Journal article
The Mott transition from a dipolar excitonic liquid to an electron-hole plasma is demonstrated in a wide GaN/(Al,Ga)N quantum well at $T=7$K by means of spatially-resolved magneto-photoluminescence spectroscopy. Increasing optical excitation density we drive the system from the excitonic state, characterized by a diamagnetic behavior and thus a...
Uploaded on: December 4, 2022 -
September 7, 2009 (v1)Publication
Strong coupling of multiple branches polariton in a ZnO microcavity.
Uploaded on: December 4, 2022 -
March 28, 2022 (v1)Publication
A giant built-in electric field in the growth direction makes excitons in wide GaN/(Al, Ga)N quantum wells spatially indirect even in the absence of any external bias. Significant densities of indirect excitons can accumulate in electrostatic traps imprinted in the quantum well plane by a thin metal layer deposited on top of the...
Uploaded on: December 3, 2022 -
September 25, 2017 (v1)Conference paper
Light emission in polar group-III nitride quantum wells (QWs) optically pumped at densities significantly below the lasing threshold is usually interpreted in terms of excitons. Whereas thin GaN QWs with fast radiative lifetimes are employed in light-emitting devices, the excitons in thick QWs (typ. 7nm) are characterized by a non-zero dipole...
Uploaded on: December 4, 2022 -
June 10, 2018 (v1)Conference paper
In group-III nitride quantum wells, indirect excitons (IXs) are naturally formed because the electron-hole pair is separated along the growth (0001) axis by strong internal electric fields. These IXs therefore exhibit strong permanent dipole moments and extremely long radiative lifetimes (> 10µs). Previous extensive studies of IXs in...
Uploaded on: December 4, 2022 -
July 12, 2019 (v1)Journal article
Dipolar excitons offer a rich playground for both design of novel optoelectronic devices and fundamental many-body physics. Wide GaN/(AlGa)N quantum wells host a new and promising realization of dipolar excitons. We demonstrate the in-plane confinement and cooling of these excitons, when trapped in the electrostatic potential created by...
Uploaded on: December 4, 2022 -
October 10, 2017 (v1)Conference paper
Light emission in polar group-III nitride quantum wells optically pumped at densities significantly below the lasing threshold is usually interpreted in terms of excitons. Such excitons are characterized by a non-zero dipole moment and long radiative lifetimes, because their constituent electron and hole are spatially separated by the built-in...
Uploaded on: December 4, 2022 -
June 1, 2014 (v1)Journal article
International audience
Uploaded on: December 4, 2022 -
November 24, 2010 (v1)Conference paper
No description
Uploaded on: December 3, 2022 -
December 23, 2015 (v1)Journal article
The formation and propagation of a polariton condensate under tightly focused excitation is investigated in a ZnO microcavity both experimentally and theoretically. 2D near-field and far-field images of the condensate are measured under quasi-continuous non-resonant excitation. The corresponding spatial profiles are compared to a model based on...
Uploaded on: February 28, 2023 -
April 16, 2009 (v1)Conference paper
oral
Uploaded on: December 3, 2022 -
March 25, 2018 (v1)Conference paper
Excitons in nitride quantum wells (QWs) are naturally indirect due to the strong internal electric field: electron and hole within such excitons are spatially separated, leading to strong dipole moments and long radiative lifetimes. The physics of indirect excitons (IXs) has been extensively studied in GaAs-based heterostructures: they can...
Uploaded on: December 4, 2022 -
February 11, 2015 (v1)Conference paper
Deep ultra-violet semiconductor lasers have numerous applications for optical storage, biochemistry or optical interconnects. UV-emitting ridge lasers usually embed nitride heterostructures grown on complex buffer layers or expensive substrates – an approach that cannot be extended to nano-photonics and microlasers. We demonstrate here the...
Uploaded on: March 25, 2023 -
November 11, 2018 (v1)Conference paper
Excitons in wide nitride Quantum Wells (QWs) are naturally indirect due to the strong internal electric field: within such excitons the electron and the hole are spatially separated, resulting in strong dipole moments and long radiative lifetimes. These properties offer the possibility to explore the collective exitonic phases with complex...
Uploaded on: December 4, 2022 -
July 24, 2017 (v1)Publication
Light emission in polar group-III nitride quantum wells (QWs) optically pumped at densities significantly below the lasing threshold is usually interpreted in terms of excitons. Whereas thin GaN QWs with fast radiative lifetimes are employed in light-emitting devices, the excitons in thick QWs (typ. 7nm) are characterized by a non-zero dipole...
Uploaded on: December 4, 2022 -
2015 (v1)Journal article
We investigate the transport of dipolar indirect excitons along the growth plane of polar (Al,Ga)N/GaN quantum well structures by means of spatially and time-resolved photoluminescence spectroscopy. The transport in these strongly disordered quantum wells is activated by dipole-dipole repulsion. The latter induces an emission blue shift that...
Uploaded on: December 4, 2022