BUARD , N.

This paper presents a methodology for analyzing the behavior of nanometer technologies regarding "Multiple Event Transients" (MET) caused by nuclear reaction induced by atmospheric neutrons. For the first time, currents collected by several sensitive areas of an ASIC cell resulting from a nuclear reaction are addressed by simulation. Libraries...

This paper presents a new Monte-Carlo methodology to investigate the transient effect occurrence in complementary metal oxide semiconductor (CMOS) logic circuits: TMC DASIE (transient Monte-Carlo detailed analysis of secondary ion effects). The production and effects of single-event transients inside CMOS combinational logic gates are examined....

International audience

This paper investigates the sensitivity of SOI and Bulk SRAMs to neutron irradiations with energies from 14 to 500 MeV. The technology sensitivity is analyzed with both experiments and Monte Carlo simulations. In particular, simulations include the nuclear interactions of neutrons with both silicon and oxygen nuclei (n-Si and n-O), in order to...

International audience