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Last name: CHENOT
First name: Sébastien
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We investigate the proton energy loss in GaN in an energy range between 0 and 65 MeV. The energy of protons generated by a cyclotron at about 65 MeV is varied by inserting an energyabsorbing medium of varying thickness. The precise modeling of the GaN Schottky diode response as a function of the absorbing medium thickness allows us to...
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We investigate the proton energy loss in GaN in an energy range between 0 and 65 MeV. The energy of protons generated by a cyclotron at about 65 MeV is varied by inserting an energy- absorbing medium of varying thickness. The precise modeling of the GaN Schottky diode response as a function of the absorbing medium thickness allows us to...
We present an epitaxy-based approach for designing a 3C-SiC Capacitive Micromachined Ultrasonic Transducer (CMUT). The design requires to consider a 3C-SiC/Si/3C-SiC heterostructure on a Si substrate. This implies to address different growth steps of SiC on Si and Si on SiC. We present some specific growth related issued, namely the control of...
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En combinant EJM et EPVOM nous avons réalisés des guides d'onde à base d'AlN et de GaN mono-cristallins qui présentent de très faibles pertes à la propagation et des possibilités d'accord de phase modal intéressantes. A partir de ces structures, nous avons réalisés des guides canaux dont nous présentons les performances linéaires et non...
Securing optical information to avoid counterfeiting and manipulation by unauthorized persons and agencies requires innovation and enhancement of security beyond basic intensity encryption. In this paper, we present a new method for polarization-dependent optical encryption that relies on extremely high resolution near-field phase encoding at...
We have demonstrated that GaN Schottky diodes can be used for high energy (64.8 MeV) proton detection. Such proton beams are used for tumor treatment, for which accurate and radiation resistant detectors are needed. Schottky diodes have been measured to be highly sensitive to protons, to have a linear response with beam intensity and fast...
We have demonstrated that GaN Schottky diodes can be used for high energy (64.8 MeV) proton detection. Such proton beams are used for tumor treatment, for which accurate and radiation resistant detectors are needed. Schottky diodes have been measured to be highly sensitive to protons, to have a linear response with beam intensity and fast...
In this work, we describe the main features of selective area growth (SAG) of GaN by molecular beam epitaxy (MBE) using ammonia. Different schemes such as growth into micrometer and nanometer size windows in Si3N4 dielectric masks and mesa structures etched on GaN or Silicon substrate are studied.
Intensity and polarization are two fundamental components of light. Independently control of them is of tremendous interest in many applications. In this paper, we propose a general vectorial encryption method, which enables arbitrary far-field light distribution with the local polarization, including orientations and ellipticities, decoupling...
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We fabricated GaN-based hollow nanowires standing upright on a sapphire substrate by the sublimation method and found that they exhibit laser oscillation at room temperature. These very long, hollow, nanosized structures cannot be fabricated by other means. Furthermore, we determined the condition under which the fundamental mode is azimuthally...
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