International audience
-
April 16, 2018 (v1)Conference paperUploaded on: December 4, 2022
-
September 2018 (v1)Journal article
Nowadays, the study of physical mechanisms that occur during Flash memory cell life is mandatory when reaching the 40nm and beyond nodes in terms of reliability. In this paper we carry out a complete experimental method to extract the floating gate potential evolution during the cell aging. The dynamic current consumption during a Channel Hot...
Uploaded on: December 4, 2022 -
March 11, 2018 (v1)Conference paper
The reliability requirements of Flash memory become more and more challenging. Flash memory technology development needs test chips to allow large statistical studies and a product-like approach. In this paper, we present a methodology of bitmap analysis to extract and follow the intrinsic and extrinsic parameters of a 40nm eFlash technology...
Uploaded on: December 4, 2022 -
October 8, 2017 (v1)Conference paper
International audience
Uploaded on: December 4, 2022