EL KURDI , Moustafa

III-Nitride semiconductors offer a versatile platform for integrated photonic circuits operating from the ultraviolet to the near-infrared spectral range. Either pure AlN or pure GaN waveguiding layers have usually been investigated so far. In this work, we report on the study of GaN/AlN bilayers epitaxially-grown on a sapphire substrate for...

Nous présentons les récents développements scientifiques et techniques liés aux sources lasers infrarouges en micro-cavités à base d'alliages germanium-étain (GeSn). Ces alliages sont des matériaux semi-conducteurs de la filière silicium compatibles avec les procédés de fabrication bas coût de l'industrie de la micro-électronique. Un des enjeux...

We demonstrate high-spatial resolution imaging of localized cavity modes through third-harmonic frequency conversion. The experiments are performed with a III-nitrideon-silicon photonic platform. The resonant cavities are formed within suspended two-dimensional photonic crystals and are excited with a continuous-wave excitation around 1550 nm....

We demonstrate phase-matched second harmonic generation in gallium nitride on silicon microdisks. The microdisks are integrated with side-coupling bus waveguides in a two-dimensional photonic circuit. The second harmonic generation is excited with a continuous wave laser in the telecom band. By fabricating a series of microdisks with diameters...

III-nitride-on-silicon L3 and H2 photonic crystal cavities with resonances down to 315 nm and quality factors up to 1085 at 337 nm have been demonstrated. The reduction of quality factor (Q) with decreasing wavelength is investigated. Besides the QW absorption below 340 nm a noteworthy contribution is attributed to the residual absorption...

On-chip microlaser sources in the blue constitute an important building block for complex integrated photonic circuits on silicon. We have developed photonic circuits operating in the blue spectral range based on microdisks and bus waveguides in III-nitride on silicon. We report on the interplay between microdisk-waveguide coupling and its...

The main interest of group-III-nitride nanophotonic circuits is the integration of active structures and laser sources. A photonic platform of group-III-nitride microdisk lasers integrated on silicon and emitting in the blue spectral range is demonstrated. The active microdisks are side-coupled to suspended bus waveguides, and the coupled...

GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap semiconductors. This growing laser technology however suffers from a number of limitations, such as poor optical confinement, lack of strain, thermal, and defects management,...

GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap semiconductors. This growing laser technology however suffers from a number of limitations, such as poor optical confinement, lack of strain, thermal, and defects management,...

GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap semiconductors. This growing laser technology however suffers from a number of limitations, such as poor optical confinement, lack of strain, thermal, and defects management,...

GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap semiconductors. This growing laser technology however suffers from a number of limitations, such as poor optical confinement, lack of strain, thermal, and defects management,...

Strained GeSn alloys are promising for realizing light emitters based entirely on group IV elements. Here, we report GeSn microdisk lasers encapsulated with a SiNx stressor layer to produce tensile strain. A 300nm GeSn layer with 5.4 at. % Sn, which is an indirect band-gap semiconductor as-grown, is transformed via tensile strain engineering...

GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-1 arXiv:submit/3525756 [physics.app-ph] 21 Dec 2020 compatible approach. Recent GeSn laser developments rely on increasing the band structure directness, by increasing the Sn...