GROMOVYI , Maksym

This work is dedicated to the study of the second harmonic generation (SHG) in III-Nitride waveguides. One of the main goals of this work, was to identify the origins of the propagation losses in GaN waveguides, and to strongly reduce them in waveguides presenting some phase matching possibilities, in order to improve the SHG efficiency. We...

In this work, we present the realization and the characterization of an optical waveguide made of AlN and GaN layers grown by MBE on Si(111) substrate. For the fundamental mode at 633nm, the propagation losses are in the order of 2 dB/cm, which is a good number for SC waveguides at this wavelength. The propagation losses dramatically increase...

III-Nitride semiconductors offer a versatile platform for integrated photonic circuits operating from the ultraviolet to the near-infrared spectral range. Either pure AlN or pure GaN waveguiding layers have usually been investigated so far. In this work, we report on the study of GaN/AlN bilayers epitaxially-grown on a sapphire substrate for...

Grâce à une nouvelle combinaison des modes de croissances EJM et MOCVD nous avons réalisés des guides d'onde à base d'AlN et de GaN mono-cristalins sur saphir qui présentent de très faibles pertes à la propagation. Nous avons pu démontrer que ces guides ont des possibilités très intéressantes de doublage de fréquence dans le proche IR et le...

En combinant EJM et EPVOM nous avons réalisés des guides d'onde à base d'AlN et de GaN mono-cristallins qui présentent de très faibles pertes à la propagation et des possibilités d'accord de phase modal intéressantes. A partir de ces structures, nous avons réalisés des guides canaux dont nous présentons les performances linéaires et non...

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We demonstrate phase-matched second harmonic generation in gallium nitride on silicon microdisks. The microdisks are integrated with side-coupling bus waveguides in a two-dimensional photonic circuit. The second harmonic generation is excited with a continuous wave laser in the telecom band. By fabricating a series of microdisks with diameters...

GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap semiconductors. This growing laser technology however suffers from a number of limitations, such as poor optical confinement, lack of strain, thermal, and defects management,...

GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap semiconductors. This growing laser technology however suffers from a number of limitations, such as poor optical confinement, lack of strain, thermal, and defects management,...

GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap semiconductors. This growing laser technology however suffers from a number of limitations, such as poor optical confinement, lack of strain, thermal, and defects management,...

GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap semiconductors. This growing laser technology however suffers from a number of limitations, such as poor optical confinement, lack of strain, thermal, and defects management,...