KONCZEWICZ , Leszek

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We report magnetotransport measurements performed on AlGaN/GaN devices with different buffer layers. Standard samples with a 1 μm thick GaN buffer show a linear Hall resistance and an almost constant magnetoresistance, as expected from a single two-dimensional electron gas (2DEG) at the AlGaN/GaN interface. Other samples, with an Al x Ga1– x N...

Electrical transport phenomena have been investigated in (Al,Ga)N/GaN heterostructures (without any intentional doping) with an Al content ranging from 10 to 32 %. Conductivity and Hall Effect measurements have been performed as a function of temperature up to 700 K. To analyse the temperature dependence of the two-dimensional electron gaz...

Raman Investigation of Heavily Al Doped 4H-SiC Layers Grown by CVD

In the case of molecular beam epitaxy (MBE), the Mg acceptors are electrically active in the as‐grown material and a priori no additional annealing procedure is necessary. However, there are still some peculiarities in the electrical properties of ammonia‐process grown GaN:Mg and some annealing effect can be observed. Additionally, the...

Electrical transport (resistivity and Hall Effect) have been studied in silicon doped aluminum nitride (AlN) thick epitaxial layers from 250 K up to 1000 K. The investigated samples, grown by molecular beam epitaxy were characterized by n-type conduction with an ambient temperature free carrier concentration of about ~ 1 x 10^15 cm^3. The donor...

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Effect of Temperature on Electrical Transport Properties of MBE grown Mg-doped GaN and AlGaN

Quantum Dot based UV Light Emitting Diodes

Abstract Ultrawide bandgap (UWBG) semiconductors offer new possibilities to develop power electronics. High voltage operation for the off‐state as well as high temperature stability of the devices in on‐state are required. More than AlGaN/GaN heterostructures, AlGaN/AlGaN heterostructures are promising candidates to meet these criteria....