L
P
Last name: LORENZINI
First name: P.
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AG-07-AffichesGT5/GT5-21 Titz
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Strategies for maintaining a low threading dislocation density in highly resistive GaN layers grown by MOVPE on sapphire or SiC substrates using Fe modulation doping are presented. Sheet resistances as high as 1E+8 Ω□ for dislocation densities lower than 8E+8 /cm² have been obtained. 2DEGs created at the AlGaN/GaN:Fe interface have good...
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Highly resistive GaN (>1E+8 Ω#) is grown by MOVPE on sapphire with dislocation density in the range 1E+8 to 8E+8 /cm², using Fe modulation doping. High mobility 2DEGs are created at AlGaN/GaN:Fe interface for moderate Al composition: 2200 cm²/V/s at n_s∼7.6E+12 /cm². Good DC and RF small signal behaviour could be obtained in HEMTs processed on...
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In this work, AlGaN/GaN high electron mobility transistors have been grown by ammonia source molecular beam epitaxy (MBE) on silicon (1 1 1), silicon carbide and GaN templates on sapphire. The structural and electrical properties of these layers have been studied in order to determine the impact of substrate choice and buffer layer on active...