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MORTET , Vincent

Last name: MORTET

First name: Vincent

January 22, 2018 (v1)

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Compositional characterization of SiC-SiO2 interfaces in MOSFETs

Beltrán, Ana M. Schamm-Chardon, Sylvie Mortet, Vincent

In the context of the MobiSiC project (Mobility engineering for SiC devices) we study 4H-SiC MOSFETs with the aim to get more insight in the C distribution and nature across the SiC-SiO2 interface and to correlate the results with electron mobility measurements. Investigations are based on the combination of structural and compositional...

Uploaded on: March 25, 2023
February 23, 2018 (v1)

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MS-3-P-5702 Nanoanalytical investigations at the interface of 4H-SiC/SiO2 MOSFETs [Póster]

Tan, H. Beltrán, Ana M. March, K.

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Uploaded on: March 25, 2023
June 12, 2019 (v1)

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Heavily boron doped nano-crystalline diamond growth by MW-LA-PECVD [Póster]

Taylor, Andy Ashcheulov, Petr Hubík, Pavel

Diamond is a unique semiconductor with a wide bandgap which is easily doped with boron and is acknowledged as one of the best materials for electrochemical applications. Heavily boron doped, high quality single crystal synthetic diamond can reach electrical conductivity of c.a. 103 S.cm, whereas polycrystalline material can reach c.a. 102 S.cm....

Uploaded on: December 5, 2022